| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
177,500 pcs
|
177500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IMZ1AT108 is a complementary NPN/PNP bipolar transistor array from ROHM Semiconductor, designed for general-purpose switching and amplification applications. This device integrates both NPN and PNP transistors in a single surface-mount package, simplifying board layout and reducing component count.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V for both transistors, a maximum power dissipation of 300mW, and a minimum DC current gain (hFE) of 120 at Ic=1mA, Vce=6V. The NPN transistor has a typical transition frequency of 180MHz, while the PNP transistor has a typical transition frequency of 140MHz. Maximum collector cutoff current is 100nA.
The IMZ1AT108 is housed in a compact SC-74 (SOT-457) package with 6 leads (SMT6 supplier device package). It is designed for surface-mount assembly and is RoHS3 compliant (unverified). The device is suitable for applications such as signal processing, driver circuits, and low-power amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.53 | $0.53 |
| 10+ | $0.33 | $0.33 |
| 100+ | $0.21 | $0.21 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.09 | $0.09 |
| 24,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
SC-74 (SOT-457) surface-mount package with SMT6 supplier device package.
150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
Minimum hFE of 120 at Ic=1mA, Vce=6V.
NPN: 180 MHz typical; PNP: 140 MHz typical.
300mW.