| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,993 pcs
|
2993 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,613 pcs
|
1613 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The ROHM Semiconductor IMZ1A is a dual bipolar transistor, combining NPN and PNP elements in a single package for space and cost savings. It is designed for general purpose small signal amplification applications.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 50V for the NPN transistor and -50V for the PNP transistor. The maximum collector current (IC) for both is 150mA. The DC current gain (hFE) ranges from 120 to 560. The transition frequency (fT) is 180MHz for the NPN and 140MHz for the PNP transistor.
This dual transistor is housed in a compact SOT-457 package, suitable for surface mounting. The independent transistor elements eliminate interference, and its integrated nature can reduce mounting costs and board area. The IMZ1A is an efficient solution for various amplification needs in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 50V for the NPN transistor and -50V for the PNP transistor.
The maximum collector current (IC) for both the NPN and PNP transistors is 150mA.
The IMZ1A transistor is supplied in a SOT-457 package.
The standard package quantity for the IMZ1A is 3000 pieces.
The DC current gain (hFE) for the IMZ1A transistor ranges from 120 to 560 under the specified test conditions.
The transition frequency (fT) is 180MHz for the NPN transistor and 140MHz for the PNP transistor.
