LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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1,181 pcs
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1181 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IMZ120R060M1H is a high-performance Silicon Carbide (SiC) Trench MOSFET designed for demanding applications. It features a maximum drain-source voltage of 1200V and a continuous drain current of 36A at 25°C.
This MOSFET boasts a low on-resistance of 60mΩ at 25°C (ID=13A, VGS=18V) and a benchmark gate threshold voltage of 4.5V. Its design emphasizes very low switching losses and a threshold-free on-state characteristic, contributing to improved efficiency and enabling higher operating frequencies.
The IMZ120R060M1H is qualified for industrial applications according to JEDEC standards. It is housed in a PG-TO247-4 package, suitable for through-hole mounting.
Potential applications include energy generation systems like solar string inverters and optimizers, industrial power supplies such as UPS and SMPS, and infrastructure charging solutions.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 1200V.
The continuous drain current is 36A at 25°C.
The typical on-resistance is 60mΩ at Tvj = 25°C, ID = 13A, VGS = 18V.
The benchmark gate threshold voltage is 4.5V.
The maximum junction temperature is 175°C.
It comes in a PG-TO247-4 package.
