| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,539 pcs
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3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IMZ120R030M1H is a 1200V Silicon Carbide (SiC) Trench MOSFET designed for high-efficiency power applications. It features very low switching losses, a threshold-free on-state characteristic, and a benchmark gate threshold voltage of 4.5V, enabling easy and simple gate drive with 0V turn-off.
Key electrical specifications include a drain-source voltage of 1200V, a continuous drain current of 56A at 25°C, and a low on-resistance of 30mΩ at 25°C (ID=25A, VGS=18V). The maximum junction temperature is rated at 175°C.
This MOSFET is qualified for industrial applications according to JEDEC standards. Potential applications include energy generation (solar string inverters, solar optimizers), industrial power supplies (UPS, SMPS), and infrastructure charging.
The component is housed in a PG-TO247-4 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 1200V.
The continuous drain current at 25°C is 56A.
The on-resistance is 30mOhm under test conditions of Tvj = 25°C, ID = 25A, VGS = 18V.
The maximum junction temperature is 175°C.
The gate threshold voltage is a benchmark 4.5V.
It comes in a PG-TO247-4 package.
