IMX25T110 Dual NPN bipolar transistor array from ROHM Semiconductor. Features 20V collector-emitter voltage, 300mW power dissipation, and 35MHz transition frequency.
Mfr Part #:

IMX25T110

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Dual NPN bipolar transistor array from ROHM Semiconductor. Features 20V collector-emitter voltage, 300mW power dissipation, and 35MHz transition frequency.
✓ Total Stock: 3,846 pcs
$ Price Range: $0.11 - $0.64

IMX25T110 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,846 pcs
3846 pcs On Request 1 On Request On Request 20+ On Request On Request

IMX25T110 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMX25T110 Description

Short technical summary and product information.

The IMX25T110 is a dual NPN bipolar transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors in a single compact surface-mount package, offering space savings and matched performance for general-purpose applications.

 

Electrical characteristics include a maximum collector-emitter voltage of 20 V, a power dissipation rating of 300 mW, and a typical transition frequency of 35 MHz. The DC current gain (hFE) is guaranteed at a minimum of 820 under test conditions of Ic = 4 mA and Vce = 2 V. The collector-emitter saturation voltage is a low 100 mV maximum at Ib = 3 mA and Ic = 30 mA. Collector-base leakage current is limited to 100 nA at Vcb = 20 V.

 

The device is rated for a maximum junction temperature of 150 °C. It is designed for surface mount assembly and is available in SC-74 and SOT-457 packages, also referred to as SMT6. The package is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).

IMX25T110 Quick Information

Product Type: Bipolar Transistor Array
Canonical Name: IMX25T110 Dual NPN Bipolar Transistor Array
Subcategory: Dual NPN

IMX25T110 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMX25T110 Estimated Pricing

Qty Low High
1+ $0.64 $0.64
10+ $0.40 $0.40
100+ $0.26 $0.26
500+ $0.19 $0.19
1,000+ $0.17 $0.17
3,000+ $0.15 $0.15
6,000+ $0.13 $0.13
9,000+ $0.12 $0.12
24,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMX25T110 Features

  • Dual NPN transistor in one package.
  • 20V maximum collector-emitter voltage.
  • 300mW power dissipation capability.
  • 35MHz typical transition frequency.

IMX25T110 Applications

  • General purpose switching and amplification.
  • Low power signal processing circuits.
  • Suits compact surface mount designs.

IMX25T110 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

20 V.

What is the power dissipation?

300 mW.

What is the DC current gain (hFE)?

Minimum 820 at Ic = 4 mA, Vce = 2 V.

What is the transition frequency?

35 MHz typical.

What is the package type?

SC-74, SOT-457 (SMT6).

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum junction temperature?

150 °C.

Home
Account

Categories