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IMX17T110 The IMX17T110 from ROHM Semiconductor is a dual NPN bipolar transistor array. It features a 50V collector-emitter breakdown voltage, 300mW power dissipation, and a minimum DC current gain of 120 at 100mA.
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IMX17T110

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Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The IMX17T110 from ROHM Semiconductor is a dual NPN bipolar transistor array. It features a 50V collector-emitter breakdown voltage, 300mW power dissipation, and a minimum DC current gain of 120 at 100mA.
✓ Total Stock: 339 pcs

IMX17T110 Available from 1 distributor

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339 pcs
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IMX17T110 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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IMX17T110 Description

Short technical summary and product information.

The IMX17T110 is a dual NPN bipolar junction transistor array from ROHM Semiconductor, designed for general purpose switching and amplification applications. Each transistor is rated for a collector-emitter voltage of 50V and a power dissipation of 300mW. The device offers a minimum DC current gain (hFE) of 120 at a collector current of 100mA and collector-emitter voltage of 3V. The maximum collector-base leakage current is 100nA. With a transition frequency of 250MHz, the IMX17T110 is suitable for low to medium frequency switching. The transistors are housed in a surface mount SC-74 (SOT-457) package with a supplier device package of SMT6. The operating junction temperature is rated up to 150°C. The device is listed as RoHS3 compliant, REACH unaffected, and has an MSL level of 1 (unlimited).

IMX17T110 Quick Information

Product Type: Bipolar Transistor Array
Series: IMX17
Canonical Name: IMX17T110
Subcategory: Dual NPN

IMX17T110 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMX17T110 Features

  • Dual NPN transistor array in single package.
  • Rated for 50V collector-emitter voltage.
  • 300mW power dissipation capability.
  • Minimum DC current gain of 120 at 100mA.
  • 250MHz transition frequency for switching applications.

IMX17T110 Applications

  • Suitable for general purpose switching circuits.
  • Ideal for signal amplification in low-power applications.
  • Used in surface mount PCB designs.
  • Applicable in motor control and relay drivers.

IMX17T110 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IMX17T110?

The maximum junction temperature is 150°C.

What is the package type of the IMX17T110?

The IC is available in SC-74 and SOT-457 packages (SMT6 supplier device package).

Is the IMX17T110 RoHS compliant?

Yes, the part is listed as RoHS3 Compliant.

What is the collector-emitter voltage rating of the IMX17T110?

The VCEO is 50V.

What is the DC current gain (hFE) of the IMX17T110?

The minimum DC current gain is 120 at Ic=100mA, Vce=3V.

What is the transition frequency of the IMX17T110?

The transition frequency (fT) is 250MHz.

What is the power dissipation rating of the IMX17T110?

The power dissipation is 300mW.

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