IMT3AT108 Dual PNP bipolar transistor array from ROHM Semiconductor. Key specs: -50V VCEO, -150mA IC, hFE 120-560, in SMT6 package.
Mfr Part #:

IMT3AT108

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Dual PNP bipolar transistor array from ROHM Semiconductor. Key specs: -50V VCEO, -150mA IC, hFE 120-560, in SMT6 package.
✓ Total Stock: 6,095 pcs
$ Price Range: $0.07 - $0.42

IMT3AT108 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,095 pcs
6095 pcs On Request 1 On Request On Request 1151+ On Request On Request

IMT3AT108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Number of Pins
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMT3AT108 Description

Short technical summary and product information.

The IMT3AT108 is a dual PNP general-purpose transistor from ROHM Semiconductor, housed in a surface-mount SMT6 (SOT-457) package. It contains two matched 2SA1037AK chips, providing a compact solution for switching and amplification applications.

 

Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of -50V minimum, a collector current rating of -150mA maximum, and a DC current gain (hFE) range of 120 to 560 at -1mA. The transistor features a typical transition frequency of 140 MHz and an output capacitance of 4.5 pF, making it suitable for low-frequency and moderate-speed circuits.

 

Designed for surface-mount assembly, the IMT3AT108 offers a total power dissipation of 150mW (200mW per element) and operates across a junction temperature range of -55°C to +150°C. The SMT6 package uses a 6-pin configuration with a marking code of T3.

 

This part is commonly used in general-purpose switching, signal amplification, and driver circuits. It is available in tape and reel packaging (3,000 pieces per reel) for automated assembly.

IMT3AT108 Quick Information

Product Type: Bipolar Transistor Array
Series: IMT3A
Canonical Name: IMT3AT108 - Dual PNP General Purpose Transistor
Subcategory: Dual PNP Transistor

IMT3AT108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IMT3AT108 Estimated Pricing

Qty Low High
1+ $0.42 $0.42
10+ $0.26 $0.26
100+ $0.16 $0.16
500+ $0.12 $0.12
3,000+ $0.09 $0.09
6,000+ $0.08 $0.08
9,000+ $0.08 $0.08
15,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMT3AT108 Features

  • Dual PNP transistor in a single SMT6 package.
  • Collector-emitter breakdown voltage of -50V.
  • DC current gain from 120 to 560.
  • Transition frequency of 140 MHz typical.
  • Surface-mount package for automated assembly.

IMT3AT108 Applications

  • General-purpose switching and amplification circuits.
  • Signal processing and driver stages.
  • Low-power portable electronics.
  • Automotive and industrial control systems.

IMT3AT108 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the IMT3AT108?

Surface-mount SMT6 (SOT-457) package.

What is the operating temperature range?

Junction temperature maximum 150°C, storage temperature range -55°C to +150°C.

Is the IMT3AT108 RoHS compliant?

Reported as RoHS3 compliant, but this is unverified. Low confidence.

What is the maximum collector current?

-150 mA.

What is the collector-emitter breakdown voltage?

-50 V minimum.

What is the DC current gain (hFE) range?

120 to 560 at VCE=-6V, IC=-1mA.

What is the power dissipation of the device?

150 mW total for the IMT3A package, 200 mW per element.

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