| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41 pcs
|
41 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The IMT1AT110 is a dual PNP bipolar junction transistor array manufactured by ROHM Semiconductor. It integrates two matched PNP transistors in a single surface-mount package, designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 300mW. The device offers a minimum DC current gain (hFE) of 120 at a test condition of 1mA collector current and 6V collector-emitter voltage. The maximum Vce saturation voltage is 500mV at a base current of 5mA and collector current of 50mA. The transition frequency is 140MHz.
The IMT1AT110 is housed in an SC-74 (SOT-457) surface-mount package with a supplier device package designation of SMT6. It is rated for a maximum junction operating temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.49 | $0.49 |
| 10+ | $0.30 | $0.30 |
| 100+ | $0.19 | $0.19 |
| 500+ | $0.14 | $0.14 |
| 1,000+ | $0.13 | $0.13 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.10 | $0.10 |
| 9,000+ | $0.08 | $0.08 |
| 24,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum power dissipation is 300mW.
The package type is SC-74 (SOT-457) with a supplier device package of SMT6.
The maximum junction operating temperature is 150°C.
The minimum DC current gain (hFE) is 120 at a test condition of Ic=1mA and Vce=6V.
The transition frequency is 140MHz.
The maximum Vce saturation voltage is 500mV at a test condition of Ib=5mA and Ic=50mA.