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IMH6AT108 Dual NPN pre-biased transistor from ROHM Semiconductor. Features 50V collector-emitter voltage, 100mA collector current, 300mW power dissipation, and 250MHz transition frequency.
Mfr Part #:

IMH6AT108

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
Dual NPN pre-biased transistor from ROHM Semiconductor. Features 50V collector-emitter voltage, 100mA collector current, 300mW power dissipation, and 250MHz transition frequency.
✓ Total Stock: 4,880 pcs
$ Price Range: $0.15 - $0.16

IMH6AT108 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
2,880 pcs
On Request
2880 pcs On Request 1 On Request On Request 16+ On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IMH6AT108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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IMH6AT108 Description

Short technical summary and product information.

The IMH6AT108 is a dual NPN pre-biased transistor array from ROHM Semiconductor, designed for low-power switching and amplification applications. It integrates two NPN transistors with built-in base resistors (47 kΩ), simplifying circuit design and reducing component count.

 

Electrical characteristics include a maximum collector-emitter voltage of 50V, maximum collector current of 100mA, and power dissipation of 300mW. The device offers a minimum DC current gain of 68 at 5mA collector current and 5V Vce, and a maximum saturation voltage of 300mV at 500µA base current. Typical transition frequency is 250MHz.

 

The transistor is housed in a surface-mount SMT6 package, which is compatible with SC-74 and SOT-457 footprints. This package is suitable for automated assembly and space-constrained PCB layouts. The device is RoHS3 compliant.

IMH6AT108 Quick Information

Product Type: Pre-Biased Transistor Array
Canonical Name: IMH6AT108 Dual NPN Pre-Biased Transistor
Subcategory: Pre-Biased

IMH6AT108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMH6AT108 Estimated Pricing

Qty Low High
3,000+ $0.16 $0.16
6,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMH6AT108 Features

  • Dual NPN pre-biased transistor array.
  • Built-in base resistor 47 kΩ.
  • Rated for 50V collector-emitter voltage.
  • 100mA maximum collector current.
  • Surface mount SMT6 package.

IMH6AT108 Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification.
  • Ideal for space-constrained designs.
  • Common in consumer electronics.

IMH6AT108 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IMH6AT108?

50V.

What is the package type of the IMH6AT108?

SC-74, SOT-457 (SMT6).

Is the IMH6AT108 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the typical transition frequency of the IMH6AT108?

250 MHz.

What is the DC current gain (hFE) of the IMH6AT108?

Minimum 68 at Ic=5mA, Vce=5V.

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