| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,713 pcs
|
2713 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The IMH24T110 from ROHM Semiconductor is a pre-biased dual NPN transistor array. It consists of two NPN transistors with built-in bias resistors (R1 = 2.2 kΩ) in a single surface-mount package. This device is rated for a collector-emitter voltage of 20 V and a continuous collector current of 600 mA, with a power dissipation of 300 mW. The transistor offers a minimum DC current gain (hFE) of 820 at 50 mA collector current and 5 V Vce, and a transition frequency of 150 MHz.
The pre-biased configuration simplifies circuit design by reducing external component count. The built-in base resistor (2.2 kΩ) sets the bias point, making the device suitable for switching and amplifier applications where space is limited. The maximum Vce saturation voltage is 150 mV at 50 mA base current and 2.5 mA collector current.
The device is housed in a SC-74 (SOT-457) surface-mount package with a SMT6 supplier device package designation. It is RoHS3 compliant, REACH unaffected, and has an MSL of Level 1 (unlimited). The mounting type is surface mount, suitable for automated assembly.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.18 | $0.18 |
| 6,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is rated at 20 V (nominal).
The device is available in SC-74 (SOT-457) surface-mount package with a supplier device package of SMT6.
Yes, the RoHS status is indicated as RoHS3 Compliant, but this is unverified.
The maximum collector current (Ic) is 600 mA.
The power dissipation (Pd) is 300 mW.
The minimum hFE is 820 at Ic=50 mA, Vce=5 V.
The transition frequency (ft) is 150 MHz.