IMH21T110 The IMH21T110 is a dual NPN pre-biased digital transistor from ROHM Semiconductor. It features a 20V collector-emitter voltage, 600mA collector current, and a low saturation voltage of 40mV typical.
Mfr Part #:

IMH21T110

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The IMH21T110 is a dual NPN pre-biased digital transistor from ROHM Semiconductor. It features a 20V collector-emitter voltage, 600mA collector current, and a low saturation voltage of 40mV typical.
✓ Total Stock: 120,000 pcs
$ Price Range: $0.16 - $0.88

IMH21T110 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,000 pcs
120000 pcs On Request 1 On Request On Request 06+ On Request On Request

IMH21T110 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMH21T110 Description

Short technical summary and product information.

The IMH21T110 is a dual NPN pre-biased digital transistor from ROHM Semiconductor, integrating two DTC614T chips in a single SMT6 package. Each transistor includes a built-in 10kΩ input resistor, simplifying circuit design by eliminating external resistor components.

 

Key electrical characteristics include a maximum collector-emitter voltage of 20V, a maximum collector current of 600mA, and a DC current gain (hFE) ranging from 820 to 2700 at Vce=5V and Ic=50mA. The low saturation voltage, typically 40mV at Ic/Ib=50mA/2.5mA, makes this device well-suited for muting circuits and other low-voltage switching applications.

 

The device is housed in a compact SC-74 (SOT-457) surface-mount package with a supplier device package designation of SMT6. It is rated for a total power dissipation of 300mW (200mW per element) and operates over a storage temperature range of -55°C to 150°C. The transition frequency is 150MHz, and the output ON resistance is typically 0.9Ω.

IMH21T110 Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: Dual NPN Pre-Biased Digital Transistor (Built-in Resistor Type)
Subcategory: Dual NPN Digital Transistor

IMH21T110 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMH21T110 Estimated Pricing

Qty Low High
1+ $0.88 $0.88
10+ $0.55 $0.55
100+ $0.36 $0.36
500+ $0.27 $0.27
1,000+ $0.25 $0.25
3,000+ $0.21 $0.21
6,000+ $0.19 $0.19
9,000+ $0.17 $0.17
24,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMH21T110 Features

  • Dual NPN pre-biased transistor array.
  • Low saturation voltage of 40mV typical.
  • High collector current rating of 600mA.
  • Built-in 10kΩ input resistor.
  • Surface mount SMT6 package.

IMH21T110 Applications

  • Ideal for muting circuits.
  • Suitable for high-current switching applications.
  • Used in low-voltage digital logic circuits.
  • Perfect for space-constrained PCB designs.

IMH21T110 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IMH21T110?

The maximum collector-emitter voltage is 20V.

What is the maximum collector current of the IMH21T110?

The maximum collector current is 600mA.

What is the package type of the IMH21T110?

The IMH21T110 is available in an SC-74 (SOT-457) surface mount package, with a supplier device package of SMT6.

What is the operating temperature range of the IMH21T110?

The storage temperature range is -55°C to 150°C, and the maximum junction temperature is 150°C.

Is the IMH21T110 RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.

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