IMD9AT108 The IMD9AT108 is a dual NPN/PNP pre-biased transistor array from ROHM Semiconductor. It features 300mW power dissipation, 50V collector-emitter voltage, and 100mA collector current in a surface-mount SMT6 package.
Mfr Part #:

IMD9AT108

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The IMD9AT108 is a dual NPN/PNP pre-biased transistor array from ROHM Semiconductor. It features 300mW power dissipation, 50V collector-emitter voltage, and 100mA collector current in a surface-mount SMT6 package.
✓ Total Stock: 61 pcs
$ Price Range: $0.09 - $0.55

IMD9AT108 Available from 1 distributor

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✓ Non-Authorised
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61 pcs
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IMD9AT108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMD9AT108 Description

Short technical summary and product information.

The IMD9AT108 from ROHM Semiconductor is a dual pre-biased transistor array containing one NPN and one PNP transistor in a single SMT6 package. Pre-biased transistors integrate bias resistors (R1 = 47 kΩ) to simplify circuit design by reducing external component count. This device is rated for a collector-emitter voltage of 50V and a collector current of 100mA, with a power dissipation of 300mW. It offers a DC current gain (hFE) of minimum 68 at 5mA, 5V, and a transition frequency of 250MHz. The SMT6 package (SC-74, SOT-457) is suitable for surface-mount assembly, enabling compact PCB layouts. Typical applications include signal switching, driver circuits, and inverter stages where space and component reduction are critical.

IMD9AT108 Quick Information

Product Type: Pre-Biased Bipolar Transistor Array
Canonical Name: ROHM Semiconductor IMD9AT108 Dual NPN/PNP Pre-Biased Transistor Array
Subcategory: BJT Arrays, Pre-Biased

IMD9AT108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMD9AT108 Estimated Pricing

Qty Low High
1+ $0.55 $0.55
10+ $0.34 $0.34
100+ $0.22 $0.22
500+ $0.16 $0.16
1,000+ $0.15 $0.15
3,000+ $0.12 $0.12
6,000+ $0.11 $0.11
9,000+ $0.10 $0.10
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMD9AT108 Features

  • Dual NPN/PNP pre-biased transistor array.
  • Integrated 47 kΩ base resistors.
  • Rated for 300mW power dissipation.
  • Surface-mount SMT6 package.
  • 250MHz transition frequency.

IMD9AT108 Applications

  • Used in signal switching circuits.
  • Ideal for driver and inverter stages.
  • Suitable for compact PCB designs.
  • Reduces external component count.

IMD9AT108 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IMD9AT108?

The collector-emitter voltage (Vce) is 50V.

What package is the IMD9AT108 available in?

It comes in an SC-74, SOT-457 surface-mount package, also known as SMT6.

Is the IMD9AT108 RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the DC current gain (hFE) of the IMD9AT108?

Minimum hFE of 68 at Ic=5mA, Vce=5V.

What is the transition frequency of the IMD9AT108?

250 MHz.

What is the base resistor value in the IMD9AT108?

The base resistor (R1) is 47 kΩ.

What is the maximum collector current?

100 mA.

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