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IMD6AT108 The IMD6AT108 is a dual pre-biased transistor array from ROHM Semiconductor, featuring one PNP and one NPN transistor in a surface mount SMT6 package. It offers a 50V collector-emitter breakdown voltage and 100mA collector current capability.
Mfr Part #:

IMD6AT108

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The IMD6AT108 is a dual pre-biased transistor array from ROHM Semiconductor, featuring one PNP and one NPN transistor in a surface mount SMT6 package. It offers a 50V collector-emitter breakdown voltage and 100mA collector current capability.
✓ Total Stock: 90,000 pcs
$ Price Range: $0.09 - $0.55

IMD6AT108 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
90,000 pcs
On Request
90000 pcs On Request 1 On Request On Request On Request On Request On Request
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IMD6AT108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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IMD6AT108 Description

Short technical summary and product information.

The IMD6AT108 from ROHM Semiconductor is a dual pre-biased transistor array that integrates one PNP and one NPN transistor in a single surface mount package. This device is designed for general-purpose switching and amplification applications where space and component count reduction are critical.

 

Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50V, a collector current (Ic) rating of 100mA, and a power dissipation of 300mW. The base resistor (R1) is 4.7 kΩ, and the minimum DC current gain (hFE) is 100 at 1mA collector current and 5V Vce. The maximum Vce saturation voltage is 300mV at 250µA base current and 5mA collector current. The transition frequency (ft) is 250 MHz.

 

The device is housed in an SC-74 (SOT-457) package with a supplier device package designation of SMT6, suitable for automated surface mount assembly. The mounting type is surface mount, making it compatible with standard PCB assembly processes.

IMD6AT108 Quick Information

Product Type: Pre-Biased Transistor Array
Canonical Name: IMD6AT108 Dual Pre-Biased Transistor Array
Subcategory: Pre-Biased

IMD6AT108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMD6AT108 Estimated Pricing

Qty Low High
1+ $0.55 $0.55
10+ $0.34 $0.34
100+ $0.22 $0.22
500+ $0.16 $0.16
1,000+ $0.15 $0.15
3,000+ $0.12 $0.12
6,000+ $0.11 $0.11
9,000+ $0.10 $0.10
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMD6AT108 Features

  • Dual transistor array with one PNP and one NPN.
  • Pre-biased with integrated 4.7 kΩ base resistor.
  • 50V collector-emitter breakdown voltage rating.
  • 100mA collector current capability.
  • 250 MHz transition frequency for switching applications.

IMD6AT108 Applications

  • General purpose switching and amplification circuits.
  • Space-constrained PCB designs requiring dual transistors.
  • Low-power signal processing and driver stages.
  • Automotive and industrial control modules.

IMD6AT108 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the IMD6AT108?

The collector-emitter breakdown voltage (Vceo) is 50V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 100mA.

What is the power dissipation of this device?

The power dissipation is 300mW.

What package does the IMD6AT108 come in?

It is available in an SC-74 (SOT-457) surface mount package, with a supplier device package designation of SMT6.

What is the DC current gain (hFE) of this transistor array?

The minimum DC current gain (hFE) is 100 at Ic=1mA and Vce=5V.

What is the transition frequency of the IMD6AT108?

The transition frequency (ft) is 250 MHz.

What is the Vce saturation voltage?

The maximum Vce saturation voltage is 300mV at Ib=250µA and Ic=5mA.

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