| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
77 pcs
|
77 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ROHM Semiconductor IMD3AT108 is a pre-biased dual transistor integrating one NPN and one PNP transistor in a compact SMT6 surface-mount package (SC-74, SOT-457). Designed for space-constrained applications, this device offers 50V collector-emitter breakdown voltage and 100mA continuous collector current capability.
This pre-biased configuration includes built-in bias resistors, reducing external component count and simplifying PCB layout. The transistor features a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage, with a maximum Vce saturation voltage of 300mV at 500µA base current and 10mA collector current.
With a transition frequency (fT) of 250 MHz, the IMD3AT108 is suitable for switching and amplification circuits up to moderate frequencies. The device dissipates up to 300mW of power and is rated for surface mount assembly, making it appropriate for automated manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
| 10+ | $0.34 | $0.34 |
| 100+ | $0.22 | $0.22 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.15 | $0.15 |
| 3,000+ | $0.11 | $0.11 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IMD3AT108 has a maximum collector-emitter voltage (VCEO) of 50 V.
The IMD3AT108 has a power dissipation of 300 mW.
The IMD3AT108 is available in an SC-74, SOT-457 surface-mount package, also known as SMT6.
The IMD3AT108 is listed as RoHS3 compliant, though this data is unverified.
The minimum DC current gain (hFE) is 30 at test conditions of Ic=5mA and Vce=5V.
The transition frequency (fT) is 250 MHz.
Yes, the IMD3AT108 contains one NPN and one PNP pre-biased transistor in a single package.