IMD3AT108 ROHM Semiconductor IMD3AT108 is a pre-biased dual transistor containing one NPN and one PNP transistor in a SMT6 surface-mount package. Key specs include 50V collector-emitter voltage, 100mA collector current, and 300mW power dissipation.
Mfr Part #:

IMD3AT108

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor IMD3AT108 is a pre-biased dual transistor containing one NPN and one PNP transistor in a SMT6 surface-mount package. Key specs include 50V collector-emitter voltage, 100mA collector current, and 300mW power dissipation.
✓ Total Stock: 107 pcs
$ Price Range: $0.09 - $0.55

IMD3AT108 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
77 pcs
77 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request On Request On Request On Request

IMD3AT108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMD3AT108 Description

Short technical summary and product information.

The ROHM Semiconductor IMD3AT108 is a pre-biased dual transistor integrating one NPN and one PNP transistor in a compact SMT6 surface-mount package (SC-74, SOT-457). Designed for space-constrained applications, this device offers 50V collector-emitter breakdown voltage and 100mA continuous collector current capability.

 

This pre-biased configuration includes built-in bias resistors, reducing external component count and simplifying PCB layout. The transistor features a minimum DC current gain (hFE) of 30 at 5mA collector current and 5V collector-emitter voltage, with a maximum Vce saturation voltage of 300mV at 500µA base current and 10mA collector current.

 

With a transition frequency (fT) of 250 MHz, the IMD3AT108 is suitable for switching and amplification circuits up to moderate frequencies. The device dissipates up to 300mW of power and is rated for surface mount assembly, making it appropriate for automated manufacturing processes.

IMD3AT108 Quick Information

Product Type: Transistor - Bipolar (BJT) - Array, Pre-Biased
Canonical Name: ROHM Semiconductor IMD3AT108 NPN/PNP Pre-Biased Dual Transistor
Subcategory: Pre-Biased Dual Transistor

IMD3AT108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMD3AT108 Estimated Pricing

Qty Low High
1+ $0.55 $0.55
10+ $0.34 $0.34
100+ $0.22 $0.22
500+ $0.16 $0.16
1,000+ $0.15 $0.15
3,000+ $0.11 $0.11
6,000+ $0.09 $0.09
9,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMD3AT108 Features

  • Pre-biased NPN and PNP dual transistor.
  • Rated for 50V collector-emitter voltage.
  • 100mA continuous collector current rating.
  • 250 MHz transition frequency for switching.
  • Surface mount SMT6 (SC-74, SOT-457) package.

IMD3AT108 Applications

  • Used in low-power switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for space-constrained PCB designs.
  • Applicable for driver and interface circuits.

IMD3AT108 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the IMD3AT108?

The IMD3AT108 has a maximum collector-emitter voltage (VCEO) of 50 V.

What is the power dissipation of the IMD3AT108?

The IMD3AT108 has a power dissipation of 300 mW.

What package does the IMD3AT108 use?

The IMD3AT108 is available in an SC-74, SOT-457 surface-mount package, also known as SMT6.

Is the IMD3AT108 RoHS compliant?

The IMD3AT108 is listed as RoHS3 compliant, though this data is unverified.

What is the DC current gain (hFE) of the IMD3AT108?

The minimum DC current gain (hFE) is 30 at test conditions of Ic=5mA and Vce=5V.

What is the transition frequency of the IMD3AT108?

The transition frequency (fT) is 250 MHz.

Does the IMD3AT108 contain NPN and PNP transistors?

Yes, the IMD3AT108 contains one NPN and one PNP pre-biased transistor in a single package.

Home
Account

Categories