| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IMD16AT108 from ROHM Semiconductor is a dual pre-biased bipolar transistor array containing one NPN and one PNP transistor in a single SMT6 package. Each transistor has a built-in 22kΩ base resistor, reducing the need for external bias components in circuit designs. The device is rated for a maximum collector-emitter breakdown voltage of 50V and a power dissipation of 300mW. Collector current capability is 100mA for the NPN side and 500mA for the PNP side.
The NPN transistor offers a minimum DC current gain of 100 at a collector current of 1mA (Vce=5V), while the PNP transistor provides a minimum gain of 82 at 50mA (Vce=5V). Maximum collector-emitter saturation voltage is 300mV under the specified test conditions for both transistors. The typical transition frequency is 250MHz, making the device suitable for low-power switching and amplification circuits.
The device is supplied in an SC-74/SOT-457 surface-mount package with an SMT6 supplier device package, suitable for compact PCB assemblies. It is reported as RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited floor life), according to the existing data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.68 | $0.68 |
| 10+ | $0.42 | $0.42 |
| 100+ | $0.27 | $0.27 |
| 500+ | $0.21 | $0.21 |
| 1,000+ | $0.18 | $0.18 |
| 3,000+ | $0.16 | $0.16 |
| 6,000+ | $0.14 | $0.14 |
| 9,000+ | $0.12 | $0.12 |
| 24,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The IMD16AT108 is available in an SC-74/SOT-457 surface-mount package with SMT6 as the supplier device package.
The part is listed as RoHS3 compliant in the existing data.
It contains one NPN and one PNP pre-biased transistor in a single package.
Each transistor has a built-in 22kΩ base resistor.
The NPN transistor is rated at 100mA and the PNP transistor at 500mA.
The maximum power dissipation is 300mW.