| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,023 pcs
|
3023 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Tape & Reel | |
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The ROHM Semiconductor IMD14T108 is a dual digital transistor integrating one NPN and one PNP pre-biased transistor in a single SC-74 (SOT-457) SMT6 package. Each transistor includes built-in bias resistors (R1 82-220 ohms, R2/R1 ratio 36.3-54.6), eliminating the need for external resistors and saving board space.
Key electrical specifications include a maximum collector-emitter voltage of 50V, maximum collector current of 500mA, and total power dissipation of 300mW (200mW per element). The DC current gain is 82 minimum at 100mA collector current and 5V collector-emitter voltage. The transition frequency is 250 MHz typical, making it suitable for low-frequency switching and amplification.
The device is surface mount packaged in SMT6 (SC-74) with gull wing terminals. It is supplied in tape and reel packaging with 3000 pieces per reel. The independent drive transistors eliminate interference between channels, making it ideal for compact designs.
Typical applications include general purpose switching, signal amplification in portable electronics, and any circuit requiring a complementary transistor pair with minimal external components.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.17 | $0.17 |
| 6,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 V.
The maximum collector current is 500 mA.
The total power dissipation is 300 mW (200 mW per element).
The device is available in SC-74 (SOT-457) surface mount package with SMT6 supplier package.
The device is marked as RoHS3 compliant, but this status is unverified and has low confidence.
The minimum DC current gain is 82 at Ic=100mA and Vce=5V.
The typical transition frequency is 250 MHz at Vce=10V, Ie=-50mA, f=100MHz.