| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
186,000 pcs
|
186000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Industrial Grade | |
| Junction Temperature | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Resistor | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The IMD10AMT1G from On Semiconductor is a dual bias resistor transistor that integrates one NPN and one PNP silicon surface mount transistor with a monolithic bias resistor network in a single SC74R package. This device is designed for space-constrained applications requiring both transistor types with built-in biasing resistors.
Key electrical specifications include a minimum collector-emitter breakdown voltage of 50V, a maximum continuous collector current of 500mA, and a total power dissipation of 285mW for both transistors. The NPN transistor (Q2) has a DC current gain (hFE) range of 100 to 600 at VCE=5V and IC=1mA, while the PNP transistor (Q1) has a range of 68 to 600 at VCE=5V and IC=100mA. The input resistor R1 is 7kΩ to 13kΩ for the NPN and 70kΩ to 130kΩ for the PNP.
The device is housed in a surface mount SC-74 (SOT-457) package with a supplier device package of SC-74R. It is RoHS3 compliant, halogen free/BFR free, and supports an operating junction temperature range of -55°C to +150°C. The part is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.60 | $0.60 |
| 10+ | $0.37 | $0.37 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.15 | $0.15 |
| 6,000+ | $0.13 | $0.13 |
| 9,000+ | $0.12 | $0.12 |
| 24,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 50V at IC=1.0mA and IB=0A.
The maximum continuous collector current is 500mA.
The device is available in an SC-74, SOT-457 surface mount package with a supplier device package of SC-74R.
Yes, the IMD10AMT1G is RoHS3 compliant as verified by the datasheet.
The storage temperature range is -55°C to +150°C and the maximum junction temperature is 150°C.
The total power dissipation for both transistors is 285mW.