| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IMBG120R030M1HXTMA1 is a 1200V N-Channel Silicon Carbide (SiC) Trench MOSFET from Infineon's CoolSiC™ family. It is designed for high-efficiency power conversion applications requiring high voltage and fast switching.
Key electrical specifications include a maximum drain-source voltage of 1200V, continuous drain current of 56A at 25°C case temperature, and a typical on-resistance of 30mΩ at 25A gate drive. The device features a benchmark gate threshold voltage of 4.5V typical and a short circuit withstand time of 3µs. Input capacitance is 2290pF and gate charge is 63nC.
The MOSFET is housed in a PG-TO263-7 package (also known as TO-263-8, D²Pak with 7 leads plus tab) for surface mount assembly. It offers a creepage and clearance distance greater than 6.1mm for high voltage isolation. The operating junction temperature range is -55°C to 175°C.
This device is suitable for applications such as drives, solar inverters, industrial power supplies, and EV charging infrastructure. The .XT interconnection technology enhances thermal performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $15.87 | $15.87 |
| 10+ | $11.18 | $11.18 |
| 100+ | $9.54 | $9.54 |
| 1,000+ | $8.90 | $8.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
56A at 25°C case temperature.
30mΩ at 25A and 18V gate drive.
-55°C to 175°C junction temperature.
PG-TO263-7 (TO-263-8, D²Pak with 7 leads plus tab).
RoHS3 Compliant (unverified).
3µs.