IMBF170R650M1XTMA1 The IMBF170R650M1XTMA1 is a CoolSiC™ silicon carbide N-channel MOSFET from Infineon. It is rated for 1700V drain-source voltage and 7.4A continuous drain current with 650mΩ maximum on-resistance.
Mfr Part #:

IMBF170R650M1XTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IMBF170R650M1XTMA1 is a CoolSiC™ silicon carbide N-channel MOSFET from Infineon. It is rated for 1700V drain-source voltage and 7.4A continuous drain current with 650mΩ maximum on-resistance.
✓ Total Stock: 66 pcs
$ Price Range: $2.51 - $6.12

IMBF170R650M1XTMA1 Available from 1 distributor

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IMBF170R650M1XTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IMBF170R650M1XTMA1 Description

Short technical summary and product information.

The IMBF170R650M1XTMA1 is a CoolSiC™ silicon carbide (SiC) N-channel trench MOSFET from Infineon Technologies. It is designed for 1700V drain-source voltage and supports up to 7.4A continuous drain current at Tc. The device features a maximum on-resistance of 650mΩ at Id=1.5A and Vgs=12V, with gate drive compatible with 12V/15V levels. Maximum gate charge is 8nC at Vgs=12V and input capacitance is 422pF at Vds=1000V.

 

This SiC MOSFET is optimized for flyback topologies and can be driven directly from many flyback controllers thanks to its 12V/0V gate-source compatibility. The benchmark gate threshold voltage of 4.5V (typical) and fully controllable dV/dt help reduce system complexity and EMI. Typical applications include solar string and central inverters, industrial UPS and SMPS, and charging infrastructure.

 

The device is supplied in a PG-TO263-7 surface-mount package (TO-263-8 / D²Pak compatible) and operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 88W at Tc.

IMBF170R650M1XTMA1 Quick Information

Product Type: Silicon Carbide (SiC) MOSFET
Series: CoolSiC
Canonical Name: CoolSiC™ 1700V SiC Trench MOSFET
Subcategory: Single N-Channel MOSFET

IMBF170R650M1XTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IMBF170R650M1XTMA1 Estimated Pricing

Qty Low High
1+ $6.12 $6.12
10+ $4.10 $4.10
100+ $2.94 $2.94
500+ $2.69 $2.69
1,000+ $2.51 $2.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMBF170R650M1XTMA1 Features

  • Rated for 1700V drain-source voltage.
  • 7.4A continuous drain current capacity.
  • 650mΩ maximum on-resistance at 12V.
  • Silicon carbide trench MOSFET technology.
  • Available in surface-mount TO-263-7 package.

IMBF170R650M1XTMA1 Applications

  • For solar string inverter power stages.
  • Suitable for industrial UPS systems.
  • Used in industrial switched-mode power supplies.
  • Enables high-frequency flyback converter designs.

IMBF170R650M1XTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IMBF170R650M1XTMA1?

The maximum drain-source voltage is 1700V.

What package is the IMBF170R650M1XTMA1 available in?

It is available in a TO-263-8 / D²Pak (7 Leads + Tab) surface-mount package, with supplier package PG-TO263-7-13.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IMBF170R650M1XTMA1 RoHS compliant?

RoHS3 compliant according to the product database record; this status has not been independently verified.

What is the maximum continuous drain current?

The maximum continuous drain current is 7.4A at case temperature Tc.

What is the on-resistance of this MOSFET?

Maximum on-resistance is 650mΩ at Id=1.5A and Vgs=12V (also specified at 15V).

What gate drive levels does the IMBF170R650M1XTMA1 support?

Gate drive is compatible with 12V and 15V; the maximum gate-source voltage is +20V/-10V.

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