| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,530 pcs
|
2530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Storage Temperature |
The Vishay Semiconductors IMBD4148-GS08 is a silicon epitaxial planar diode designed for fast switching applications. Encased in a compact SOT-23 plastic package, it is particularly well-suited for automatic insertion processes.
Key electrical characteristics include a maximum reverse voltage of 75V and a peak reverse voltage of 100V. The average forward rectified current is rated at 150mA, with a surge forward current capability of 500mA. The diode exhibits a typical forward voltage of 1.0V at 10mA and a leakage current of 2.5µA at 70V reverse voltage. Its reverse recovery time is a rapid 4ns under specified test conditions.
Thermal performance is managed with a power dissipation of up to 350mW at 25°C ambient temperature and a thermal resistance of 450°C/W. The junction temperature can reach up to 150°C, with a storage temperature range from -65°C to +150°C.
This diode is also available in other case styles, including DO-35 (1N4148), Mini-MELF (LL4148), and SOD-123 (1N4148W), offering flexibility for various design requirements. The GS08 packaging option provides 3000 units per 7-inch reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 75V.
The average forward current rating is 150mA.
The typical forward voltage at 10mA is 1.0V.
The reverse recovery time is 4ns.
The package type is SOT-23.
The standard package quantity is 3000 units per 7-inch reel.