| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,013 pcs
|
3013 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
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The IMB11AT110 is a dual PNP pre-biased transistor array manufactured by ROHM Semiconductor. This device integrates two PNP transistors with built-in bias resistors, simplifying circuit design by reducing external component count.
Key electrical specifications include a collector-emitter voltage (Vceo) of 50V, a collector current (Ic) of 100mA, and a power dissipation of 300mW. The DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V collector-emitter voltage. The maximum Vce saturation voltage is 300mV at a base current of 500µA and collector current of 10mA. The transition frequency (fT) is 250MHz.
The device is housed in a surface-mount SC-74 (SOT-457) package, also known as the SMT6 supplier device package. This compact package is suitable for automated assembly in space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
| 10+ | $0.28 | $0.28 |
| 100+ | $0.17 | $0.17 |
| 500+ | $0.13 | $0.13 |
| 1,000+ | $0.12 | $0.12 |
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.07 | $0.07 |
| 24,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 50V.
The maximum collector current (Ic) is 100mA.
It uses a surface-mount SC-74 (SOT-457) package, also known as SMT6.
The integrated base resistor is 10 kΩ.
The part is listed as RoHS3 Compliant, but this data is unverified.
The minimum DC current gain (hFE) is 30 at Ic=5mA and Vce=5V.
The power dissipation is 300 mW.