IMB10AT110 IMB10AT110 is a dual PNP pre-biased bipolar transistor array from ROHM Semiconductor. It supports 50V collector-emitter voltage, 100mA collector current, and 300mW power dissipation in a surface-mount SMT6 package.
Mfr Part #:

IMB10AT110

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
IMB10AT110 is a dual PNP pre-biased bipolar transistor array from ROHM Semiconductor. It supports 50V collector-emitter voltage, 100mA collector current, and 300mW power dissipation in a surface-mount SMT6 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.09 - $0.56

IMB10AT110 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 16+ On Request On Request

IMB10AT110 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

IMB10AT110 Description

Short technical summary and product information.

The IMB10AT110 is a dual PNP pre-biased bipolar transistor array from ROHM Semiconductor. Housed in an SMT6 surface-mount package, the device integrates 47 kΩ bias resistors, which simplifies circuit design and reduces the number of external components needed for switching and amplification stages.

 

The transistor is rated for a maximum collector-emitter voltage of 50 V, a maximum collector current of 100 mA, and a maximum power dissipation of 300 mW. It provides a minimum DC current gain of 80 at 10 mA collector current and 5 V, a maximum saturation voltage of 300 mV, and a transition frequency of 250 MHz for high-frequency applications.

 

The SMT6 package uses the SC-74/SOT-457 footprint, making it suitable for compact PCB layouts and automated assembly. The part is listed as RoHS3 compliant and MSL 1 in the source database.

IMB10AT110 Quick Information

Product Type: Pre-Biased PNP Transistor Array
Canonical Name: Dual PNP Pre-Biased Transistor Array
Subcategory: Pre-Biased Dual PNP Array

IMB10AT110 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IMB10AT110 Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.35 $0.35
100+ $0.22 $0.22
500+ $0.17 $0.17
1,000+ $0.15 $0.15
3,000+ $0.13 $0.13
6,000+ $0.11 $0.11
9,000+ $0.10 $0.10
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IMB10AT110 Features

  • Dual PNP pre-biased transistor in SMT6 package.
  • Integrated 47 kΩ bias resistors.
  • Rated for 50 V collector-emitter voltage.
  • Supports 100 mA collector current.
  • Transition frequency up to 250 MHz.

IMB10AT110 Applications

  • Suitable for low-power switching applications.
  • Use in signal amplification circuits.
  • Fits compact surface-mount PCB designs.

IMB10AT110 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IMB10AT110?

The maximum collector-emitter voltage is 50 V.

What package is the IMB10AT110 available in?

The transistor is available in the SC-74/SOT-457 package, with a supplier device package designation of SMT6.

Is the IMB10AT110 RoHS compliant?

The source database lists the IMB10AT110 as RoHS3 compliant; however, this status has not been independently verified.

What is the maximum collector current?

The maximum collector current is 100 mA.

What is the DC current gain of the IMB10AT110?

The minimum DC current gain (hFE) is 80, measured at 10 mA collector current and 5 V collector-emitter voltage.

Does the IMB10AT110 include built-in resistors?

Yes, each PNP transistor includes a 47 kΩ bias resistor.

Home

Categories