| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,550 pcs
|
2550 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 99+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channels | |
| Forward Current | |
| Forward Voltage | |
| Industrial Grade | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Voltage | |
| SVHC Present | |
| Tape & Reel |
The ILD213T from Infineon Technologies is an optically coupled pair consisting of a GaAs infrared LED and a silicon NPN phototransistor. This component is housed in a standard SOIC-8 small outline package, making it suitable for high-density applications where space is limited.
Key electrical specifications include a forward current of 30mA, a collector emitter saturation voltage of 400mV, and a forward voltage of 1.55V. It provides an isolation voltage of 4000Vrms and a current transfer ratio of 100%. The device operates within a temperature range of -55°C to 100°C.
Designed for surface mounting, the ILD213T is ideal for applications requiring signal isolation. Its dual-channel configuration and compact package facilitate integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.46 | $8.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to +100°C.
The ILD213T comes in an SOIC-8 surface mount package.
The isolation voltage is 4000 Vrms.
The minimum current transfer ratio is 100%.
The maximum collector-emitter saturation voltage is 400 mV.
The maximum power dissipation is 125 mW.