| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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195,038 pcs
|
195038 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,788 pcs
|
1788 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay ILD213 is an optically coupled pair consisting of a GaAs infrared LED and a silicon NPN phototransistor. It comes in a standard SOIC-8 small outline package, making it suitable for high-density applications where space is limited.
Key electrical specifications include a 30mA forward current, 400mV collector emitter saturation voltage, 6V reverse breakdown voltage, and 1.55V forward voltage. The device offers a current transfer ratio of 100% and an isolation voltage of 4000Vrms. Its rise time is a maximum of 5µs.
Thermal characteristics include a maximum power dissipation of 125mW and a typical power dissipation of 300mW. The operating temperature ranges from -55°C to 100°C. The output voltage rating is 70V, with a DC voltage rating of 1.2V.
This optocoupler is ideal for applications requiring electrical isolation between circuits. Its surface-mount SOIC-8 package facilitates easy integration into printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The ILD213 is available in an SOIC-8 surface mount package.
The operating temperature range is -55°C to 100°C.
The maximum output voltage is 70 V.
The typical forward current is 30 mA.
The isolation voltage is 4000 Vrms.
The typical current transfer ratio is 100%.
The maximum rise time is 5 microseconds.