DistyParts Icon
IKZ75N65ES5XKSA1 The Infineon IKZ75N65ES5XKSA1 is a 650V, 75A Trench IGBT in a TO-247-4 package. It features low VCEsat of 1.42V typical and is designed for high-speed soft switching applications.
Mfr Part #:

IKZ75N65ES5XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon IKZ75N65ES5XKSA1 is a 650V, 75A Trench IGBT in a TO-247-4 package. It features low VCEsat of 1.42V typical and is designed for high-speed soft switching applications.
✓ Total Stock: 1,980 pcs
$ Price Range: $3.34 - $7.51

IKZ75N65ES5XKSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,980 pcs
On Request
1980 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IKZ75N65ES5XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Supplier Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
View Similar Products (0)

IKZ75N65ES5XKSA1 Description

Short technical summary and product information.

The Infineon IKZ75N65ES5XKSA1 is a TRENCHSTOP 5 soft switching IGBT with a 650V collector-emitter breakdown voltage and 75A continuous collector current rating. It offers a low typical collector-emitter saturation voltage of 1.42V at nominal current, reducing conduction losses. The device integrates a full current rated RAPID 1 fast antiparallel diode, enabling efficient switching in hard and soft switching topologies.

 

Key electrical characteristics include a total gate charge of 164 nC typical, turn-on switching energy of 1.3 mJ, and turn-off switching energy of 1.5 mJ under test conditions of 400V, 15A, 22.3 Ohm, and 15V gate drive. The IGBT is capable of operating at junction temperatures up to 175°C, with a maximum power dissipation of 395 W.

 

The IKZ75N65ES5XKSA1 is housed in a PG-TO247-4 package with a Kelvin emitter pin for improved gate drive performance. It is through-hole mountable and RoHS3 compliant. Typical applications include industrial UPS, industrial SMPS, energy storage systems, battery chargers, and welding equipment.

IKZ75N65ES5XKSA1 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Series: IKZ75N65ES5
Canonical Name: Infineon Technologies IKZ75N65ES5XKSA1 TRENCHSTOP 5 Soft Switching IGBT
Subcategory: Single IGBT

IKZ75N65ES5XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IKZ75N65ES5XKSA1 Estimated Pricing

Qty Low High
1+ $7.51 $7.51
10+ $4.32 $4.32
100+ $3.62 $3.62
480+ $3.34 $3.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

IKZ75N65ES5XKSA1 Features

  • 650V collector-emitter breakdown voltage.
  • 75A continuous collector current rating.
  • Low typical VCEsat of 1.42V.
  • High-speed soft switching Trench IGBT.
  • RoHS3 compliant and Pb-free.

IKZ75N65ES5XKSA1 Applications

  • Ideal for industrial UPS systems.
  • Suitable for industrial SMPS designs.
  • Used in energy storage applications.
  • Applicable for battery chargers.
  • Designed for welding equipment.

IKZ75N65ES5XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

650 V.

What package does the IKZ75N65ES5XKSA1 come in?

TO-247-4 (PG-TO247-4).

What is the operating temperature range?

-40°C to 175°C (junction temperature).

Is the IKZ75N65ES5XKSA1 RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the typical collector-emitter saturation voltage?

1.42 V at nominal current.

What is the gate charge?

164 nC typical.

What is the maximum power dissipation?

395 W.

Home
Account

Categories