| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,160 pcs
|
38160 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Reverse Recovery Time |
The Infineon IKZ75N65EH5 is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. This component is designed for power switching applications and features a robust TO-247-4 package.
Key electrical specifications include a maximum collector-emitter voltage of 650V and a maximum collector current of 90A. The device exhibits a typical collector-emitter saturation voltage of 2.1V and a reverse recovery time of 58ns. With a maximum power dissipation rating of 395W, it is suitable for high-power designs.
Thermal performance is critical for IGBTs, and the IKZ75N65EH5 operates within a temperature range of -40°C to 175°C. The through-hole mounting type facilitates integration into various circuit designs. Environmental compliance data indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
This IGBT is part of Infineon's range of power semiconductor solutions, offering efficient switching and reliable performance for industrial and automotive applications. Its specifications make it a suitable choice for power converters, inverters, and motor drives where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-4.
-40°C to 175°C.
90A.
58ns.
395W.
Through hole.