| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,577 pcs
|
1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The Infineon Technologies IKW50N65F5 is an Insulated Gate Bipolar Transistor (IGBT) designed for power applications. It features a maximum voltage rating of 650V and a maximum current capability of 80A, with a power dissipation of 305W.
This component is housed in a PG-TO247-3 package, suitable for through-hole mounting. Its specifications make it suitable for various power switching and control applications where high voltage and current handling are required.
The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IKW50N65F5 has a maximum voltage rating of 650V.
The IKW50N65F5 can handle a maximum current of 80A.
The IKW50N65F5 has a power dissipation of 305W.
The IKW50N65F5 is supplied in a PG-TO247-3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.