| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,638 pcs
|
1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IKW40N120CS6 is a sixth-generation TRENCHSTOP IGBT6 transistor utilizing Trench and Fieldstop technology. It is copacked with a soft and fast recovery anti-parallel diode, offering high efficiency in hard switching and resonant topologies. This IGBT is designed for easy paralleling due to its positive temperature coefficient in VCEsat.
Key electrical specifications include a maximum collector-emitter voltage of 1200V and a continuous collector current of 40A. The typical collector-emitter saturation voltage at 25°C is 1.85V. It supports a maximum junction temperature of 175°C.
This component is qualified for industrial applications according to JEDEC standards. Its applications include industrial UPS, chargers, energy storage systems, three-level solar string inverters, and welding equipment.
The IKW40N120CS6 comes in a PG-TO247-3 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The continuous collector current is 40A.
The typical collector-emitter saturation voltage at 25°C is 1.85V.
The maximum junction temperature is 175°C.
It is supplied in the PG-TO247-3 package.
Yes, it is RoHS3 compliant.
