| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,940 pcs
|
7940 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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The Infineon IKW30N65H5 is a high-speed 5th generation IGBT utilizing TRENCHSTOP™ 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, providing best-in-class efficiency in hard switching and resonant topologies.
This IGBT features a 650V breakdown voltage and a maximum junction temperature of 175°C. It is designed for applications such as solar converters, uninterruptible power supplies, welding converters, and mid-to-high range switching frequency converters. The component is qualified according to JEDEC standards and is RoHS compliant with Pb-free lead plating.
The IKW30N65H5 is housed in a PG-TO247-3 package, suitable for through-hole mounting. Its key electrical characteristics include a typical collector-emitter saturation voltage of 1.65V at 25°C and a continuous collector current of 30A.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The maximum junction temperature is 175°C.
The typical collector-emitter saturation voltage is 1.65V.
The IKW30N65H5 is available in the PG-TO247-3 package.
Yes, the IKW30N65H5 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
The REACH status is Unaffected.