| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Leakage Current (Maximum @ V_CE=1200 V, V_GE=0 V, T_j=150 °C) | |
| Collector Leakage Current (Maximum @ V_CE=1200 V, V_GE=0 V, T_j=25 °C) | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Saturation Voltage (Typical @ V_GE=15 V, I_C=25 A, T_j=125 °C) | |
| Collector-Emitter Saturation Voltage (Typical @ V_GE=15 V, I_C=25 A, T_j=150 °C) | |
| Current | |
| DC Collector Current (Maximum @ Tc=100 °C) | |
| Diode Forward Voltage (Typical @ V_GE=0 V, I_F=25 A, T_j=125 °C) | |
| Diode Forward Voltage (Typical @ V_GE=0 V, I_F=25 A, T_j=150 °C) | |
| Diode Forward Voltage (Typical/Maximum @ V_GE=0 V, I_F=25 A, T_j=25 °C) | |
| Gate Charge | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| IGBT Type | |
| Input Type | |
| Integrated Gate Resistor | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time | |
| Soldering Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Transconductance | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| thermal_resistance_junction_to_case (Maximum @ Diode) | |
| thermal_resistance_junction_to_case (Maximum @ IGBT) |
The IKW25T120 is a discrete IGBT from Infineon's TrenchStop series, incorporating field stop technology for low saturation voltage and high ruggedness. It features a maximum collector-emitter voltage of 1200V and a DC collector current of 50A at 25°C (25A at 100°C). The device delivers a typical collector-emitter saturation voltage of 1.7V at 25°C and 25A, with a maximum of 2.2V. Its integrated gate resistor (8Ω) and low gate charge (155nC) simplify gate drive design, while the short circuit withstand time of 10μs enhances reliability.
The IGBT is paired with a soft, fast recovery anti-parallel emitter controlled HE diode, providing low forward voltage (1.7V typical at 25°C) and reverse recovery time of 200ns. The device is qualified per JEDEC standards and is designed for applications such as frequency converters and uninterruptible power supplies. It operates over a junction temperature range of -40°C to 150°C and is housed in a PG-TO-247-3 package with through-hole mounting. The IKW25T120 is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.61 | $5.61 |
| 10+ | $5.48 | $5.48 |
| 30+ | $5.39 | $5.39 |
| 90+ | $5.30 | $5.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
It is housed in a PG-TO-247-3 package (TO-247-3) with through-hole mounting.
The operating junction temperature range is -40°C to 150°C.
Yes, it is RoHS3 compliant and Pb-free.
1.7V typical at 25°C, 25A, VGE=15V; maximum 2.2V.
Turn-on delay time is 50ns and turn-off delay time is 560ns at 600V, 25A, 22Ω gate resistance.
Yes, it has a short circuit withstand time of 10μs at VGE=15V, VCC≤1200V, Tj≤150°C.