| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Mounting Type |
The Infineon IKW25N120H3 is a high-speed Insulated Gate Bipolar Transistor (IGBT) utilizing Trench and Fieldstop technology. It is designed for applications requiring high voltage and current handling capabilities, such as uninterruptible power supplies and welding converters.
Key electrical specifications include a maximum collector-emitter voltage (V CE) of 1200V and a continuous collector current (I C) of 25A. The device also features a very low V CEsat and a soft, fast recovery antiparallel diode, contributing to low EMI.
With a maximum junction temperature (T vjmax) of 175°C, this IGBT is qualified according to JEDEC standards for target applications. It comes in a PG-TO247-3 package, suitable for through-hole mounting.
The component is Pb-free and RoHS compliant, indicating adherence to environmental standards in its manufacturing and materials.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The continuous collector current rating is 25A.
The maximum junction temperature is 175°C.
The IKW25N120H3 is supplied in the PG-TO247-3 package.
Yes, the IKW25N120H3 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
