| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,054 pcs
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1054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The Infineon IKW20N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ and Fieldstop technology. It is designed for demanding applications such as frequency converters and uninterruptible power supplies (UPS).
Key electrical characteristics include a maximum collector-emitter voltage of 600V and a DC collector current rating of 41A at 25°C, derating to 28A at 100°C. The device boasts a low typical collector-emitter saturation voltage (VCE(sat)) of 1.5V at 25°C, contributing to reduced power losses. It also features a very soft, fast recovery anti-parallel Emitter Controlled HE diode.
The IGBT operates within a junction temperature range of -40°C to 175°C. It is housed in a PG-TO247-3 package, suitable for through-hole mounting. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This IGBT offers high ruggedness and temperature-stable behavior, making it a reliable choice for power electronics designs requiring efficient switching and robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V at Tj ≥ 25°C.
The package is PG-TO247-3, with through-hole mounting.
The operating junction temperature range is -40°C to 175°C.
The maximum DC collector current is 41A at TC = 25°C.
The typical collector-emitter saturation voltage is 1.5V at VGE = 15V, IC = 20A, Tj = 25°C.
The short circuit withstand time is 5µs under VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C.
The maximum power dissipation is 166W at TC = 25°C.