Mfr Part #:

IKW15N120T2

Mfr Name: Infineon

The Infineon IKW15N120T2 is a 1200V, 15A IGBT from the TrenchStop® 2nd generation series. It is designed for applications like frequency converters and uninterruptible power supplies.

✓ Total Stock: 9,571 pcs

$ Price Range: $1.67

IKW15N120T2 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,325 pcs On Request	5325 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,505 pcs On Request	2505 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,741 pcs On Request	1741 pcs	On Request	1	On Request	On Request	17+	On Request	On Request

IKW15N120T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Power Dissipation	235W
Storage Temperature	-55...+150°C

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IKW15N120T2 Description

Short technical summary and product information.

The Infineon IKW15N120T2 is an IGBT transistor featuring TrenchStop® 2nd generation technology for 1200V applications. This device offers a collector-emitter voltage of 1200V and a continuous collector current of 15A at 150°C.

Key electrical characteristics include a typical collector-emitter saturation voltage of 1.75V at 25°C and a gate-emitter threshold voltage of 5.8V. The device also incorporates a soft, fast recovery anti-parallel Emitter Controlled HE Diode.

Designed for high ruggedness and temperature-stable behavior, the IKW15N120T2 is suitable for frequency converters and uninterruptible power supply (UPS) systems. Its easy paralleling capability is facilitated by a positive temperature coefficient in VCE(sat).

The IGBT is housed in a PG-TO-247-3 package, offering a junction-to-case thermal resistance of 0.63 K/W. It operates within a junction temperature range of -40°C to 175°C.

IKW15N120T2 Quick Information

Product Type: IGBT

Series: TrenchStop® 2nd generation

Canonical Name: Infineon IKW15N120T2 IGBT

Subcategory: Insulated Gate Bipolar Transistor

IKW15N120T2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free lead plating

IKW15N120T2 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IKW15N120T2 Features

1200V collector-emitter voltage rating.
15A continuous collector current.
TrenchStop® 2nd generation technology.
Soft, fast recovery Emitter Controlled Diode.
PG-TO-247-3 package.

IKW15N120T2 Applications

Designed for frequency converters.
Suitable for uninterruptible power supplies.
Offers easy paralleling capability.
Features low EMI and gate charge.

IKW15N120T2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage of the IKW15N120T2?

The collector-emitter voltage is 1200V.

What is the continuous collector current for the IKW15N120T2?

The continuous collector current is 15A at 150°C.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 1.75V at 25°C.

What is the operating junction temperature range?

The operating junction temperature range is -40°C to 175°C.

What package type is the IKW15N120T2 supplied in?

The IKW15N120T2 is supplied in a PG-TO-247-3 package.

Is the IKW15N120T2 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.