| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ TC=25 °C) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Diode Pulsed Current | |
| Gate Charge | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Termination Style | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Transconductance | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| collector_current (Maximum @ TC=100 °C) | |
| collector_emitter_saturation_voltage (Typical @ VGE=15 V, IC=8 A, Tj=125 °C) | |
| collector_emitter_saturation_voltage (Typical @ VGE=15 V, IC=8 A, Tj=150 °C) | |
| collector_emitter_saturation_voltage (Typical/Maximum @ VGE=15 V, IC=8 A, Tj=25 °C) | |
| diode_forward_current (Maximum @ TC=100 °C) | |
| diode_forward_current (Maximum @ TC=25 °C) | |
| diode_forward_voltage (Typical @ VGE=0 V, IF=8 A, Tj=125 °C) | |
| diode_forward_voltage (Typical @ VGE=0 V, IF=8 A, Tj=150 °C) | |
| diode_forward_voltage (Typical/Maximum @ VGE=0 V, IF=8 A, Tj=25 °C) | |
| zero_gate_voltage_collector_current (Maximum @ VCE=1200 V, VGE=0 V, Tj=150 °C) | |
| zero_gate_voltage_collector_current (Maximum @ VCE=1200 V, VGE=0 V, Tj=25 °C) |
The Infineon IKW08T120FKSA1 is a 1200V, 16A NPT Trench Field Stop IGBT designed for high efficiency in power conversion applications. It integrates a soft, fast recovery Emitter Controlled HE diode in a compact TO-247-3 package.
Key electrical specifications include a collector-emitter breakdown voltage of 1200V minimum, a maximum DC collector current of 16A at 25°C case temperature (8A at 100°C), and a pulsed collector current rating of 24A. The typical collector-emitter saturation voltage is 1.7V at 15V gate drive and 8A collector current. The device offers a short circuit withstand time of 10 µs and a maximum power dissipation of 70W at 25°C.
The IGBT features a positive temperature coefficient in VCE(sat), enabling easy parallel operation. It is housed in a through-hole PG-TO247-3-1 package and is RoHS compliant with Pb-free lead plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.20 | $5.20 |
| 10+ | $3.41 | $3.41 |
| 100+ | $2.54 | $2.54 |
| 480+ | $2.12 | $2.12 |
| 1,200+ | $1.97 | $1.97 |
| 2,640+ | $1.85 | $1.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) is 1200V.
The maximum DC collector current at TC=25°C is 16A.
It comes in a TO-247-3 through-hole package (PG-TO247-3-1).
The operating junction temperature range is -40°C to +150°C.
Yes, it is RoHS3 compliant with Pb-free lead plating.