| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,251 pcs
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6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IKQ75N120CT2 is a second-generation IGBT utilizing TRENCHSTOP™ 2 technology. This component offers a very low VCE(sat) of 1.75V at nominal current and a maximum junction temperature of 175°C.
Key electrical parameters include a 1200V collector-emitter voltage and a 75A collector current. The IGBT is copacked with a soft, fast recovery full-current-rated anti-parallel Emitter Controlled Diode. It is qualified for industrial applications according to JEDEC47/20/22 tests.
The device comes in a PG-TO247-3-46 package, suitable for through-hole mounting. Its design facilitates easy paralleling due to a positive temperature coefficient in VCE(sat).
Applications for this IGBT include General Purpose Drives (GPD), Servo Drives, Commercial Vehicles, Agricultural Vehicles, Three-level Solar String Inverters, and Welding.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the IKQ75N120CT2 is 1200V.
The continuous collector current (IC) rating for the IKQ75N120CT2 is 75A.
The typical saturation voltage (VCEsat) at Tvj=25°C for the IKQ75N120CT2 is 1.75V.
The maximum junction temperature (Tvjmax) for the IKQ75N120CT2 is 175°C.
The IKQ75N120CT2 is supplied in the PG-TO247-3-46 package.
Yes, the IKQ75N120CT2 is RoHS3 compliant.