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960 pcs
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960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IKQ100N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the TRENCHSTOP™ series. It features TRENCHSTOP™ and Fieldstop technology for 600V applications, offering tight parameter distribution, high ruggedness, and temperature-stable behavior.
Key electrical characteristics include a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 100A. The typical collector-emitter saturation voltage (VCE(sat)) is 1.5V at 25°C junction temperature, and the maximum junction temperature (Tvjmax) is 175°C. It also has a short circuit withstand time of 5µs.
This IGBT is suitable for general-purpose inverters, uninterruptible power supplies, motor drives, and medium to low switching frequency power converters. It comes in a PG-TO247-3-46 package.
The device utilizes a soft, fast recovery anti-parallel Emitter Controlled diode. Its design emphasizes low EMI and low gate charge (QG), contributing to increased current capability and efficient operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The package type is PG-TO247-3-46.
The maximum DC collector current is 100A.
The typical VCE(sat) is 1.5V at 25°C.
The maximum junction temperature is 175°C.
The short circuit withstand time is 5µs.