| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,990 pcs
|
1990 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Ic (Nominal @ Continuous, T_c=25 °C) | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Eoff) | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(sat) (Typical) | |
| Voltage |
The IKP40N65H5XKSA1 from Infineon Technologies is a high-speed 650V IGBT in the TRENCHSTOP 5 generation. It is rated for a continuous collector current of 40A at a case temperature of 25°C and a power dissipation of 255W. The device integrates a co-packed RAPID 1 fast and soft antiparallel diode, making it suitable for hard-switching and resonant topologies that demand efficient, high-speed operation.
Typical electrical characteristics include a saturation voltage of 1.65V at 25°C, a gate charge of 95nC, and switching energies of 390µJ (on) and 120µJ (off) under 400V, 20A test conditions. Reverse recovery time is 62ns. The IGBT is offered in a TO-220-3 through-hole package with a maximum junction temperature of 175°C, supporting reliable operation in industrial power control environments. Applications include solar converters, uninterruptible power supplies, welding converters, and mid- to high-frequency switching converters.
The collector-emitter voltage rating is 650V.
It is available in a TO-220-3 through-hole package (supplier device package PG-TO220-3).
-40°C to 175°C.
Yes, the datasheet indicates RoHS3 compliance and Pb-free lead plating.
Datasheet specifies 40A continuous at T_c=25°C; an existing database entry lists 74A under unspecified conditions.
The typical VCE(sat) is 1.65V at 25°C.
Yes, it is co-packed with a RAPID 1 fast and soft antiparallel diode.