Mfr Part #:

IKP20N60T

The IKP20N60T is a 600V, 41A Trench Field Stop IGBT from Infineon Technologies. It features a low Vce(on) of 2.05V and fast switching energy of 310/460 µJ.

✓ Total Stock: 11,095 pcs

IKP20N60T Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	6,358 pcs On Request	6358 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	4,737 pcs On Request	4737 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IKP20N60T Description

Short technical summary and product information.

The IKP20N60T is a discrete IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, employing Trench Field Stop technology. It is designed for high-efficiency power conversion applications. Key electrical specifications include a collector-emitter breakdown voltage (Vces) of 600V, a maximum collector current (Ic) of 41A, and a maximum power dissipation of 166W. The typical saturation voltage (Vce(on)) is 2.05V at Vge=15V and Ic=20A, contributing to low conduction losses. The device has a gate charge (Qg) of 120 nC and switching energy of 310 µJ (turn-on) and 460 µJ (turn-off) under test conditions of 400V, 20A, 12 Ohm gate resistance, and 15V gate drive. The reverse recovery time (trr) of the integrated diode is 41 ns. The IKP20N60T features a standard gate input and is capable of operating over a junction temperature range of -40°C to 175°C. It is housed in a through-hole TO-220-3 package (PG-TO220-3), suitable for a variety of mounting and thermal management solutions. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified from source documents.

IKP20N60T Quick Information

Product Type: Single IGBT

Canonical Name: Infineon Technologies IKP20N60T Discrete IGBT

Subcategory: Single IGBT

IKP20N60T Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IKP20N60T Features

Trench Field Stop technology for low conduction loss.
Rated for 600V collector-emitter breakdown voltage.
Maximum collector current of 41A.
Fast switching with 310/460 µJ switching energy.
High operating junction temperature up to 175°C.

IKP20N60T Applications

Used in power supply inverters and converters.
Ideal for motor drive control circuits.
Suitable for uninterruptible power supply (UPS) systems.
Applicable in renewable energy inverters.

IKP20N60T FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage of the IKP20N60T?

600V.

What package is the IKP20N60T available in?

TO-220-3 (PG-TO220-3).

What is the operating temperature range of the IKP20N60T?

-40°C to 175°C (junction temperature).

Is the IKP20N60T RoHS compliant?

Yes, it is listed as RoHS3 Compliant, but this status is unverified.

What is the typical saturation voltage (Vce(on)) of the IKP20N60T?

2.05V at Vge=15V, Ic=20A.

What is the switching energy of the IKP20N60T?

310 µJ (turn-on) and 460 µJ (turn-off) at 400V, 20A, 12 Ohm gate resistance, 15V gate drive.

What is the gate charge of the IKP20N60T?

120 nC.

Category	Transistors - IGBTs - Single
Manufacturer Name	Infineon Technologies
Current	41 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	-40°C ~ 175°C (TJ)
Power	166 W
Reverse Recovery Time (trr)	41 ns
Supplier Device Package	PG-TO220-3
Switching Energy	310µJ (on), 460µJ (off)
Tape & Reel	No
Td (on	18ns/199ns
Test Condition	400V, 20A, 12Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 20A
Voltage	600 V