| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,006 pcs
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2006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,300 pcs
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1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IKP15N60T is an IGBT transistor designed for high-performance applications. It features TRENCHSTOP™ and Fieldstop technology, providing very tight parameter distribution, high ruggedness, and temperature-stable behavior.
Key electrical characteristics include a collector-emitter voltage (Vce) of 600V, a continuous collector current (Ic) of 26A at 25°C, and a low typical collector-emitter saturation voltage (Vce(sat)) of 1.5V at 25°C. The maximum junction temperature (Tjmax) is 175°C, and it has a short circuit withstand time of 5µs.
This device is designed for applications such as frequency converters and uninterrupted power supplies. It incorporates a soft, fast recovery anti-parallel Emitter Controlled HE diode. The IGBT is housed in a PG-TO220-3 package suitable for through-hole mounting.
Environmental compliance includes Pb-free lead plating, indicating RoHS compliance. The operating temperature range is -40°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The maximum DC collector current is 26A at a case temperature of 25°C, and 23A at 100°C.
The operating junction temperature range is -40°C to +175°C.
The IKP15N60T is available in a PG-TO220-3 package.
The typical collector-emitter saturation voltage is 1.5V at VGE = 15V and IC = 15A at 25°C.
The maximum power dissipation is 130W at a case temperature of 25°C.
Yes, the short circuit withstand time is 5µs at VGE = 15V and VCC ≤ 400V.