| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,349 pcs
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4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IKA15N60T is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for 600V applications. It utilizes TRENCHSTOP™ and Fieldstop technology, offering very tight parameter distribution, high ruggedness, and stable temperature behavior.
Key electrical characteristics include a collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) of 18.3A at 25°C case temperature, and 10.6A at 100°C. The device boasts a low typical collector-emitter saturation voltage (VCE(sat)) of 1.5V at 25°C and a maximum junction temperature (Tjmax) of 175°C. It also features a short circuit withstand time of 5µs.
This IGBT is suitable for applications such as air conditioning and inverters. It comes in a PG-TO220-3 (FullPAK) package, designed for through-hole mounting. The component is Pb-free and RoHS compliant.
Additional specifications include a power dissipation of 35.7W at 25°C, thermal resistance values for junction-to-case (RthJC) of 4.2 K/W for the IGBT and 4.8 K/W for the diode, and a junction-to-ambient thermal resistance (RthJA) of 80 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the IKA15N60T is 600V.
The continuous collector current (IC) rating at 25°C case temperature is 18.3A.
The maximum junction temperature (Tjmax) for the IKA15N60T is 175°C.
The IKA15N60T comes in a PG-TO220-3 (FullPAK) package.
Yes, the IKA15N60T is RoHS3 Compliant.
The typical collector-emitter saturation voltage (VCE(sat)) is 1.5V at 25°C.