| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,505 pcs
|
1505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Infineon IHW30N160R5 is a Reverse-Conducting Insulated Gate Bipolar Transistor (IGBT) with an integrated monolithic body diode. This component is designed for high-voltage applications, offering a collector-emitter voltage (V CE) of 1600 V and a continuous collector current (I C) of 30 A.
Key features include a powerful monolithic body diode with low forward voltage, tight parameter distribution, and high ruggedness with stable temperature behavior. The IGBT also boasts low V CEsat and easy parallel switching capability due to a positive temperature coefficient in V CEsat, along with low EMI.
This IGBT is packaged in a PG-TO247-3 through-hole package. It is RoHS compliant, halogen-free, and features Pb-free lead plating, making it suitable for industrial applications.
Potential applications for the IHW30N160R5 include induction cooking and microwave ovens.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1600 V.
The continuous collector current is 30 A.
It is a Reverse-Conducting IGBT with a monolithic body diode.
The IHW30N160R5 is supplied in a PG-TO247-3 package.
Yes, the IHW30N160R5 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the REACH Status is REACH Unaffected.