| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
710 pcs
|
710 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Halogen Free | |
| Operating Temperature | |
| Voltage |
The Infineon IHW30N135R5 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the Resonant Switching Series. It incorporates a powerful monolithic body diode designed for soft commutation, offering low forward voltage.
This IGBT utilizes Infineon's TRENCHSTOP technology, which provides very tight parameter distribution, high ruggedness, and temperature-stable behavior. It also features low VCEsat and easy parallel switching capability due to a positive temperature coefficient in VCEsat. The device is qualified according to JESD-022 for target applications.
Key electrical specifications include a maximum Collector-Emitter Voltage of 1350V and a DC Collector Current of 30A at 100°C (60A at 25°C). The typical Collector-Emitter Saturation Voltage is 1.65V at 25°C, and the maximum junction temperature is 175°C.
The IHW30N135R5 comes in a PG-TO247-3 package. It is Pb-free and RoHS compliant, as well as Halogen-free according to IEC 61249-2-21. Applications include induction cooking and microwave ovens.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter voltage for the IHW30N135R5 is 1350V.
The DC Collector Current at 100°C for the IHW30N135R5 is 30A.
The IHW30N135R5 comes in a PG-TO247-3 package.
The IHW30N135R5 is RoHS3 Compliant.
The maximum junction temperature for the IHW30N135R5 is 175°C.