IHW30N135R3 The Infineon IHW30N135R3 is a reverse conducting IGBT with a monolithic body diode, rated for 1350V and 60A. It is designed for resonant switching applications and comes in a TO-247-3 package.
Mfr Part #:

IHW30N135R3

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon IHW30N135R3 is a reverse conducting IGBT with a monolithic body diode, rated for 1350V and 60A. It is designed for resonant switching applications and comes in a TO-247-3 package.
Total Stock: 1,498 pcs

IHW30N135R3 Available from 1 distributor

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1,498 pcs
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IHW30N135R3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Rated)
Current
Gate Charge
Halogen Free
IGBT Type
Input Type
Maximum Junction Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
VCEsat (Typical @ 25°C)
Vce(on) (Max) @ Vge, Ic
Voltage

IHW30N135R3 Description

Short technical summary and product information.

The Infineon IHW30N135R3 is a reverse conducting IGBT (RC-IGBT) from the Resonant Switching Series, featuring a monolithic body diode optimized for soft commutation. It utilizes TRENCHSTOP technology to deliver a tight parameter distribution, high ruggedness, and a low VCEsat of 1.65V typical at 25°C. The device is rated for a collector-emitter breakdown voltage of 1350V and a continuous collector current of 60A (30A rated), with a maximum junction temperature of 175°C.

 

This IGBT is specifically designed for resonant and soft-switching topologies, making it suitable for inductive cooking, inverterized microwave ovens, and resonant converters. The monolithic body diode eliminates the need for an external freewheeling diode in many soft-switching designs. The device is housed in a PG-TO247-3 through-hole package, offering robust thermal performance with a power dissipation rating of 349W.

 

The IHW30N135R3 is Pb-free and RoHS compliant, and it is halogen free according to IEC 61249-2-21. It is qualified according to JESD-022 for target applications.

IHW30N135R3 Quick Information

Product Type: Reverse Conducting IGBT
Series: IHW30N135R3
Canonical Name: Infineon Technologies IHW30N135R3 Reverse Conducting IGBT
Subcategory: Single IGBT

IHW30N135R3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IHW30N135R3 Features

  • 1350V collector-emitter breakdown voltage.
  • 60A continuous collector current rating.
  • Low VCEsat of 1.65V typical at 25°C.
  • Monolithic body diode for soft commutation.
  • TO-247-3 through-hole package.

IHW30N135R3 Applications

  • Ideal for inductive cooking applications.
  • Used in inverterized microwave ovens.
  • Suitable for resonant converters.
  • Designed for soft switching applications.

IHW30N135R3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the IHW30N135R3?

The collector-emitter breakdown voltage is 1350V.

What is the maximum collector current rating?

The continuous collector current rating is 60A, with a rated current of 30A.

What package does the IHW30N135R3 come in?

It comes in a TO-247-3 (PG-TO247-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -40°C to 175°C.

Is the IHW30N135R3 RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

What is the typical VCEsat of this IGBT?

The typical VCEsat is 1.65V at 25°C.

What is the gate charge of the IHW30N135R3?

The gate charge is 263 nC.

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