| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,030 pcs
|
7030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon IHW20N135R3 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon. This component is designed for power switching applications and features a robust TO-247 package suitable for through-hole mounting.
Key electrical specifications include a maximum collector current of 40A and a high collector emitter voltage rating of 1.35kV. The device also offers a maximum power dissipation of 288W, indicating its suitability for demanding power circuits. Its typical collector emitter saturation voltage is 1.85V.
Operating within a temperature range of -40°C to 175°C, the IHW20N135R3 is built for reliability in various environmental conditions. The through-hole mounting type facilitates integration into printed circuit boards for power supply designs, motor control, and other industrial applications requiring efficient power management.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are based on precomputed fields with low confidence. For critical applications, verification of these compliance details is recommended.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 40A.
The collector emitter voltage rating is 1.35kV.
The maximum power dissipation is 288W.
The operating temperature range is from -40°C to 175°C.
It is supplied in a TO-247 package.