IHW20N120R5 The IHW20N120R5 is a reverse conducting IGBT with monolithic body diode, rated for 1200V and 20A. It features Trench Field Stop technology and comes in a TO-247-3 package.
Mfr Part #:

IHW20N120R5

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IHW20N120R5 is a reverse conducting IGBT with monolithic body diode, rated for 1200V and 20A. It features Trench Field Stop technology and comes in a TO-247-3 package.
✓ Total Stock: 1,340 pcs
$ Price Range: $1.43 - $3.94

IHW20N120R5 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,340 pcs
1340 pcs On Request 1 On Request On Request On Request On Request On Request

IHW20N120R5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Halogen Free
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

IHW20N120R5 Description

Short technical summary and product information.

The IHW20N120R5 is a reverse conducting IGBT with a monolithic body diode, designed for resonant switching applications. It utilizes Infineon's TRENCHSTOP technology, offering low VCEsat, high ruggedness, and temperature-stable behavior. The device is rated for a collector-emitter voltage of 1200V and a continuous collector current of 20A at Tcase=25°C.

 

Key electrical characteristics include a typical collector-emitter saturation voltage of 1.55V at Tvj=25°C and a maximum of 1.75V at Vge=15V, Ic=20A. The gate charge is 170nC, and the switching energy (off) is 750µJ under test conditions of 600V, 20A, 10Ohm, 15V. The device can dissipate up to 288W and operates over a junction temperature range of -40°C to 175°C.

 

The IHW20N120R5 is housed in a PG-TO247-3-41 package with through-hole mounting. It is Pb-free, RoHS compliant, and halogen free according to IEC 61249-2-21. The device is qualified for industrial applications per JEDEC47/20/22 standards.

IHW20N120R5 Quick Information

Product Type: IGBT
Series: TRENCHSTOP
Canonical Name: Reverse Conducting IGBT with Monolithic Body Diode
Subcategory: Single IGBT

IHW20N120R5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free

IHW20N120R5 Estimated Pricing

Qty Low High
1+ $3.94 $3.94
10+ $2.30 $2.30
100+ $1.86 $1.86
480+ $1.55 $1.55
1,200+ $1.43 $1.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

IHW20N120R5 Features

  • 1200V collector-emitter voltage rating.
  • 20A continuous collector current at 25°C.
  • Trench Field Stop technology for low VCEsat.
  • Monolithic body diode for soft commutation.
  • RoHS compliant and halogen free.

IHW20N120R5 Applications

  • Ideal for inductive cooking applications.
  • Used in inverterized microwave ovens.
  • Suitable for resonant converters.
  • Designed for soft switching applications.

IHW20N120R5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the IHW20N120R5?

The collector-emitter voltage rating is 1200V.

What is the continuous collector current rating?

The datasheet specifies 20A at Tcase=25°C, though the database lists 40A with a conflict flagged.

What is the operating temperature range?

The junction temperature range is -40°C to 175°C.

What package is the IHW20N120R5 available in?

It is available in a TO-247-3 package (PG-TO247-3-41) with through-hole mounting.

Is the IHW20N120R5 RoHS compliant?

Yes, the datasheet states it is RoHS compliant and Pb-free.

What is the typical collector-emitter saturation voltage?

The typical VCEsat is 1.55V at Tvj=25°C, with a maximum of 1.75V at Vge=15V, Ic=20A.

What is the gate charge of the IHW20N120R5?

The gate charge is 170nC.

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