| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,010 pcs
|
3010 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,531 pcs
|
1531 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IHW15N120R3 is a robust Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon. This component is designed for demanding power electronics applications, offering a high collector-emitter voltage of 1.2kV and a maximum collector current of 30A.
With a maximum power dissipation of 254W, the IHW15N120R3 is suitable for applications requiring significant power handling capabilities. It operates within a wide temperature range, from -40°C to 175°C, ensuring reliability in various environmental conditions.
The IGBT is housed in a TO-247 package, a common through-hole form factor that facilitates mounting and heat dissipation. Its specifications make it a suitable choice for power conversion, motor control, and industrial power supply designs where high voltage and current handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1.2kV.
The maximum collector current is 30A.
The maximum power dissipation is 254W.
The operating temperature range is -40°C to 175°C.
The IHW15N120R3 comes in a TO-247 package.
It is a through-hole mount type.