Mfr Part #:

IGW75N60T

Mfr Name: Infineon

The Infineon IGW75N60T is a low-loss IGBT transistor designed for power applications. It features a 600V collector-emitter voltage and a 150A continuous collector current.

✓ Total Stock: 7,865 pcs

$ Price Range: $3.63

IGW75N60T Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	5,415 pcs On Request	5415 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,450 pcs On Request	2450 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

IGW75N60T Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Failure Rate	XGW75N60
Mounting Style	Through Hole
Operating Temperature	-40 C / +175 C
Power Dissipation	428 W
Technology	Si
Voltage	600 V

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IGW75N60T Description

Short technical summary and product information.

The Infineon IGW75N60T is a high-performance IGBT transistor from the Trenchstop series, designed for efficient power switching applications. It offers a robust 600V collector-emitter voltage rating and a substantial 150A continuous collector current capability at 25°C, with a maximum power dissipation of 428W.

This device operates within a wide temperature range, from -40°C to +175°C, making it suitable for demanding environments. The IGBT is constructed using Silicon (Si) technology and features a low collector-emitter saturation voltage of 1.5V, contributing to reduced conduction losses.

Packaged in a standard TO-247-3 through-hole configuration, the IGW75N60T is designed for easy integration into power electronic circuits. Its through-hole mounting style facilitates assembly on printed circuit boards.

Key electrical characteristics include a maximum gate-emitter voltage of ±20V and a gate-emitter leakage current of 100nA. The series is identified as XGW75N60, and the trade name is Trenchstop, indicating its advanced technology for low losses.

IGW75N60T Quick Information

Product Type: IGBT Transistor

Series: XGW75N60

Canonical Name: Infineon IGW75N60T IGBT Transistor

Subcategory: IGBTs

IGW75N60T Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IGW75N60T Estimated Pricing

Qty	Low	High
1+	$3.63	$3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IGW75N60T Features

600V collector-emitter voltage rating.
150A continuous collector current.
428W maximum power dissipation.
Wide -40°C to +175°C operating temperature.
TO-247-3 through-hole package.

IGW75N60T Applications

Suitable for high-power switching.
Ideal for industrial power supplies.
Used in motor control circuits.
Applicable in renewable energy systems.

IGW75N60T FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the IGW75N60T?

The maximum collector-emitter voltage (VCEO Max) for the IGW75N60T is 600V.

What is the continuous collector current rating of the IGW75N60T?

The continuous collector current at 25°C for the IGW75N60T is 150A.

What is the operating temperature range for the IGW75N60T?

The IGW75N60T operates between -40°C and +175°C.

What package type is the IGW75N60T supplied in?

The IGW75N60T is supplied in a TO-247-3 package.

What is the power dissipation of the IGW75N60T?

The power dissipation (Pd) for the IGW75N60T is 428W.