| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,815 pcs
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4815 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IGW60T120 is a Low Loss Insulated Gate Bipolar Transistor (IGBT) from the TrenchStop series, utilizing TrenchStop and Fieldstop technology for 1200V applications. This component is designed for high ruggedness and temperature stable behavior, offering easy parallel switching capability due to its positive temperature coefficient in VCE(sat).
Key electrical specifications include a 1200V collector-emitter voltage and a 60A DC collector current at 90°C (100A at 25°C). It features a short circuit withstand time of 10µs and a typical VCE(sat) of 1.7V at 25°C. The device operates within a junction temperature range of -40°C to +150°C and has a power dissipation of 375W at 25°C.
Designed for applications such as frequency converters and uninterrupted power supplies, the IGW60T120 comes in a PG-TO-247-3 package. It is Pb-free lead plating and RoHS compliant. The IGBT also boasts low EMI and low gate charge.
This IGBT is qualified according to JEDEC 1 for target applications and is suitable for designs requiring robust performance and thermal stability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The continuous collector current rating at 90°C is 60A.
The short circuit withstand time is 10µs.
The operating junction temperature range is -40°C to +150°C.
The IGW60T120 is supplied in a PG-TO-247-3 package.
The IGW60T120 is RoHS3 Compliant.