LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,388 pcs
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1388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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720 pcs
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720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The Infineon IGW40N120H3 is a high-speed IGBT utilizing Trench and Fieldstop technology. It is rated for a collector-emitter voltage of 1200V and a continuous collector current of 40A at 100°C, with a peak pulsed current capability of 160A. This device is designed for applications requiring high switching performance, offering total switching losses below 500 µJ.
The IGBT operates with a maximum junction temperature of 175°C and features a gate-emitter voltage rating of ±20V. It is housed in a PG-TO247-3 package suitable for through-hole mounting.
Potential applications include solar inverters, uninterruptible power supplies, welding converters, and converters operating at high switching frequencies. The component is Pb-free and RoHS compliant.
Key electrical characteristics include a very low VCEsat and low EMI. The device is qualified according to JEDEC standards for target applications.
| Qty | Low | High |
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| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
80 A at Tc=25°C, 40 A at Tc=100°C.
175°C.
Total switching losses are less than 500 µJ.
PG-TO247-3 through-hole package.
Yes, it has Pb-free lead plating.
