IGW25N120H3FKSA1 IGBT with 1200V collector-emitter voltage, 50A collector current, and 326W power dissipation. Suitable for high-speed switching applications in solar inverters and UPS.
Mfr Part #:

IGW25N120H3FKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IGBT with 1200V collector-emitter voltage, 50A collector current, and 326W power dissipation. Suitable for high-speed switching applications in solar inverters and UPS.
Total Stock: 1,260 pcs
$ Price Range: $2.12 - $5.91

IGW25N120H3FKSA1 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,260 pcs
1260 pcs On Request 1 On Request On Request On Request On Request On Request

IGW25N120H3FKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Halogen Free
IGBT Type
Industrial Grade
Input Type
Lead Style
Maximum Junction Temperature
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

IGW25N120H3FKSA1 Description

Short technical summary and product information.

The IGW25N120H3FKSA1 is a high-speed IGBT from Infineon Technologies, part of the TRENCHSTOP third generation series. It is designed for applications requiring low switching losses and high efficiency, such as solar inverters, uninterruptible power supplies, and welding converters.

 

Key electrical parameters include a collector-emitter voltage rating of 1200V, collector current of 50A, and power dissipation of 326W. The device features a low typical VCEsat of 2.05V at 25A, 15V gate drive, and a maximum junction temperature of 175°C. Total switching energy is 2.65mJ under test conditions of 600V, 25A, 23Ω gate resistor, and 15V gate voltage. Gate charge is 115nC, and typical delay times are 27ns on and 277ns off, enabling high-frequency operation.

 

The IGBT is housed in a PG-TO247-3 package (TO-247-3) with through-hole mounting, offering robust thermal performance. The supplier device package is PG-TO247-3-1. It is RoHS compliant with Pb-free lead plating and is recommended for use with the Infineon SiC diode IDH15S120.

IGW25N120H3FKSA1 Quick Information

Product Type: IGBT
Series: Third Generation
Canonical Name: IGBT, 1200V, 50A, Trench Field Stop, TO-247-3
Subcategory: Through Hole IGBT

IGW25N120H3FKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IGW25N120H3FKSA1 Estimated Pricing

Qty Low High
1+ $5.91 $5.91
10+ $3.40 $3.40
100+ $2.77 $2.77
480+ $2.38 $2.38
1,200+ $2.24 $2.24
2,640+ $2.22 $2.22
5,040+ $2.12 $2.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

IGW25N120H3FKSA1 Features

  • 1200V collector-emitter voltage rating.
  • 50A continuous collector current capability.
  • Low 2.05V typical saturation voltage.
  • Trench Field Stop technology for low losses.
  • RoHS compliant with Pb-free lead plating.

IGW25N120H3FKSA1 Applications

  • Used in solar inverter power stages.
  • Suitable for uninterruptible power supplies.
  • Ideal for high-frequency welding converters.
  • Recommended for use with SiC diode IDH15S120.

IGW25N120H3FKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the IGW25N120H3FKSA1?

1200V

What is the maximum collector current?

50A

What is the power dissipation?

326W

What is the operating temperature range?

-40°C to 175°C (junction temperature)

What is the package type?

TO-247-3 (PG-TO247-3-1)

Is the device RoHS compliant?

Yes, RoHS3 compliant with Pb-free lead plating.

What is the typical saturation voltage?

2.05V typical at 25A, 15V gate drive.

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